| PART |
Description |
Maker |
| FMMT620 FMMT620TA FMMT620TC |
SUPERSOT 80V NPN SILICON LOW SATURATION TRANSISTOR
|
http://
Zetex Semiconductors
|
| FMMT620-15 |
80V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23
|
Diodes Incorporated
|
| FMB1020 |
NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package 500 mA, 45 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package
|
Delta Electronics, Inc.
FAIRCHILD[Fairchild Semiconductor]
|
| 2SB1198 2SB1198K A5800312 2SB1198KQ |
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 500MA I(C) | SC-59
From old datasheet system
Low-frequency Transistor(-80V, -0.5A)
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
Low-frequency Transistor(-80V/ -0.5A)
|
ROHM[Rohm]
|
| FMB3946 |
NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package
|
FAIRCHILD[Fairchild Semiconductor]
|
| ENA0413A 2SC6098-E 2SC6098-TL-E |
Bipolar Transistor 80V, 2.5A, Low VCE(sat), NPN Single TP/TP-FA
|
ON Semiconductor
|
| NTE19 NTE18 |
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 700MA I(C) | SIP
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 700MA I(C) | SIP
Silicon Complementary Transistors High Voltage, High Current Capacity Driver
|
NTE[NTE Electronics]
|
| 151-05 151-08 151-07 151-09 152-05 164-18 164-04 1 |
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 6A I(C) | TO-82
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 10A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 6A I(C) | TO-82
晶体管|晶体管|叩| 100V的五（巴西）总裁|甲一c）| STR-5/16
晶体管|晶体管|叩| 180V五（巴西）总裁|甲一c）| STR-5/16
晶体管|晶体管| npn型| 140伏特五（巴西）总裁|甲一c）| STR-5/16
晶体管|晶体管|叩| 50V五（巴西）总裁| 6A条一c）|2
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 100V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 60V的五（巴西）总裁|甲一c）| STR-5/16
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 50V五（巴西）总裁|甲一（c）| STR-5/16
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 70V的五（巴西）总裁|甲一（c）| STR-5/16
|
Samsung Semiconductor Co., Ltd.
Molex, Inc.
Intel, Corp.
|
| Q62702-F1049 BFQ81 |
NPN Silicon RF Transistor for low noi...
NPN Silicon RF Transistor (For low-noise amplifiers up to 2GHz and broadband analog and digital applications)
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| 2SC5378 2SC5378R |
TRANSISTOR | BJT | NPN | 8V V(BR)CEO | 80MA I(C) | SOT-323
Silicon NPN epitaxial planer type(For low-voltage low-noise high-frequency oscillation)
|
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| BFP520 Q62702-F1794 Q62702-F1491 |
NPN Silicon RF Transistor )For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)
NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
